2SC2017

SKU: 2SC2017

2SC2017 Transistor Silicon NPN CASE: TO3 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Mitsubishi
Vbr CBO	450
Vbr CEO	400
Max. PD (W)	100
t(f) Max. (S)	800n
Min hFE	8.0
Ic Max. (A)	10
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
R(sat) (Û)	200m
Derate Above 25°C	800m
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	450 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	8
SKU	552278

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