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2SC2018
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2SC2018

SKU: 2SC2018
2SC2018 Transistor - Case: TO3 Make: Mitsubishi
+ VAT 20% for UK purchases
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Mitsubishi
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 100
t(f) Max. (S) 800n
Min hFE 7.0
Ic Max. (A) 15
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 100m
Derate Above 25°C 800m
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 15 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN 7
SKU 552279
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