2SC2019

SKU: 2SC2019

2SC2019 Transistor Silicon NPN CASE: TO3 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Mitsubishi
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	100
t(f) Max. (S)	800n
Min hFE	10
Ic Max. (A)	15
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
R(sat) (Û)	100m
Derate Above 25°C	800m
Oper. Temp (°C) Max.	140
@VCE (V)	3.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	552280

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