| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO220 |
| Manufacturer |
Sanyo Semiconductor |
| Vbr CBO |
80 |
| Vbr CEO |
75 |
| Max. PD (W) |
10 |
| Max. hFE |
200 |
| Min hFE |
25 |
| Ic Max. (A) |
3 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
10u |
| Polarity |
NPN |
| Derate Above 25°C |
86m |
| @Vcb (V) |
80 |
| VCE Max. |
75 V |
| Trans. Freq (Hz) Min. |
150M |
| Oper. Temp (°C) Max. |
150 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
10 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
75 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
3 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
70 pF |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
| SKU |
16711 |