2SC2101

SKU: 2SC2101

2SC2101 Transistor Silicon NPN CASE: SOT120 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT120
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	18
Max. PD (W)	15
Min hFE	10
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	100m
Trans. Freq (Hz) Min.	400M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	4-28
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	25 pF
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	585170

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