The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2106
View detailed images (12)

2SC2106

SKU: 2SC2106
2SC2106 Transistor Silicon NPN CASE: SOT120 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT120
Manufacturer Toshiba
Vbr CBO 35
@Ic (A) 3.0
Mat. Silicon Logic
Oper. Gain Typ (S21) 6.0
Oper. Pwr Out Typ. 12
f(osc) Max. (Hz) 470M
Polarity NPN
PD Max. (W) 30
Coll. (or drain) Current Max. 2.8
@Freq. (test) 470M
@VCE (test) 12
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 2.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 15 pF
Transition Frequency (ft): 900 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 585175
Back