2SC2113

SKU: 2SC2113

2SC2113 Transistor Silicon NPN CASE: SOT32 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT32
Manufacturer	Matsushita Electronics
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	4.0
Min hFE	130
Ic Max. (A)	2.0
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
R(sat) (Û)	600m
Derate Above 25°C	32m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	150
@VCE (V)	10
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	50 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	130
SKU	550526

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