2SC2116
View detailed images (1)

2SC2116

SKU: 2SC2116
2SC2116 Transistor Silicon NPN CASE: TO50-2 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO50-2
Manufacturer Toshiba
Vbr CBO 30
@Freq. (test) 1.0G
@Ic (A) 5.0m
@Ic (A) 10m
Mat. Silicon Logic
Noise Fig. 4.0
Oper. Gain Typ (S21) 8.0
f(osc) Max. (Hz) 3.0G
Polarity NPN
PD Max. (W) 225m
S11 Deg. (Typ) -175
S11 Mag Typ. .318
S22 Deg. Typ. -85
S22 Mag Typ. .273
@VDS (VCE) (test) (V) 10
Coll. (or drain) Current Max. 50m
@Freq. (test) 1.0G
@VCE (test) 10
Oper. Temp (°C) Max. 125
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.225 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 1.2 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 765893
Back