2SC2117

SKU: 2SC2117

2SC2117 Transistor Silicon NPN CASE: MD34 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	MD34
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	17
Max. PD (W)	7.5
Max. hFE	150
Min hFE	10
Ic Max. (A)	800m
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	51m
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	7.5 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	17 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.8 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	15 pF
Transition Frequency (ft):	175 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	765892

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