2SC2123

SKU: 2SC2123

2SC2123 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	1.0k
Vbr CEO	400
Max. PD (W)	50
Min hFE	5.0
Ic Max. (A)	12
@Ic (test) (A)	8.0
Icbo Max. @Vcb Max. (A)	1.0mϸ
Polarity	NPN
Tr Max. (s)	1.0u
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	6.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	1000 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	5
SKU	585177

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