2SC2125

SKU: 2SC2125

2SC2125 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	2.2k
Vbr CEO	800
Max. PD (W)	50
Max. hFE	35
Min hFE	8
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	500u
Polarity	NPN
Derate Above 25°C	344m
Trans. Freq (Hz) Min.	5.0M
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	2200 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	125 pF
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	8
SKU	585179

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