2SC2175

SKU: 2SC2175

2SC2175 Transistor Silicon NPN CASE: TO3 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Mitsubishi
Vbr CBO	350
Vbr CEO	350
Max. PD (W)	100
t(f) Max. (S)	500n
Min hFE	15
Ic Max. (A)	10
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
R(sat) (Û)	240m
Derate Above 25°C	800m
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	350 V
Maximum Collector-Emitter Voltage \|Vce\|	350 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	10
SKU	552283

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