The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC218
View detailed images (12)

2SC218

SKU: 2SC218
2SC218 Transistor Silicon NPN CASE: TO5 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Fujitsu
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 650m
Derate (Amb) (W/°C) 4.3m
hfe 50
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) .10u
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 50m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.65 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 540114
Back