2SC2181

SKU: 2SC2181

2SC2181 Transistor Silicon NPN CASE: SOT121 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT121
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	18
Max. PD (W)	70
Min hFE	10
Ic Max. (A)	10
@Ic (test) (A)	2.0
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
Derate Above 25°C	466m
Trans. Freq (Hz) Min.	300M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	4-28
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	70 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	160 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	395109

Back