2SC2182

SKU: 2SC2182

2SC2182 Transistor Silicon NPN CASE: SOT120 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT120
Manufacturer	Toshiba
Vbr CBO	65
Vbr CEO	35
Max. PD (W)	60
Min hFE	10
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	400m
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	4-28
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	65 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	160 pF
Transition Frequency (ft):	75 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	585187

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