2SC2206

SKU: 2SC2206

2SC2206 Transistor Silicon NPN CASE: SOT33 MAKE: Matsushita Electronics

Datasheet

2SC2206 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT33
Manufacturer	Matsushita Electronics
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	400m
Derate (Amb) (W/°C)	1.8m
hfe	50
Ic Max. (A)	30m
Polarity	NPN
Trans. Freq (Hz) Min.	300M
@VCE (test) (V)	10i
Oper. Temp (°C) Max.	135
@Ic (A)	1.0m
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	135 °C
Collector Capacitance (Cc)	1.3 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	343864

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