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2SC2231
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2SC2231

SKU: 2SC2231
2SC2231 Transistor Silicon NPN CASE: SOT128 MAKE: Toshiba
Datasheet
2SC2231 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT128
Manufacturer Toshiba
Vbr CBO 200
Vbr CEO 180
Max. PD (W) 12
Max. hFE 320
Min hFE 100
Ic Max. (A) 200m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 96m
Trans. Freq (Hz) Min. 50M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.5 W
Maximum Collector-Base Voltage |Vcb| 200 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 343870
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