| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO92 |
| Manufacturer |
Toshiba |
| Vbr CBO |
120 |
| Vbr CEO |
120 |
| Max. PD (W) |
300m |
| C(ob) (F) |
4.0p |
| hfe |
400= |
| Ic Max. (A) |
100m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
100M |
| @VCE (test) (V) |
6.0 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
120 V |
| Maximum Collector-Emitter Voltage |Vce| |
120 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
3 pF |
| Transition Frequency (ft): |
50 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
200 |
| SKU |
395120 |