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2SC2279
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2SC2279

SKU: 2SC2279
2SC2279 Transistor Silicon NPN CASE: SOT128 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT128
Manufacturer Toshiba
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 10
Max. hFE 150
Min hFE 30
Ic Max. (A) 100m
@Ic (test) (A) 20m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C 80m
Trans. Freq (Hz) Min. 35M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 18 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 585192
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