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2SC2298
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2SC2298

SKU: 2SC2298
2SC2298 is a silicon NPN epitaxial transistor intended for high-gain amplifier applications. Supplied in a TO-126 MOD package, its key ratings are VCBO 30 V, VCEO 30 V, VEBO 10 V, collector current 1.0 A (peak 1.5 A), collector dissipation 0.8 W (8 W at Tc=25°C) and junction temperature 150°C.
Price:
£5.75 Inc. VAT (£4.79 Ex. VAT)
£5.75 Inc. VAT (£4.79 Ex. VAT)
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Datasheet
2SC2298 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Hitachi
Vbr CEO 30
Max. PD (W) 8.0
Min hFE 4.0k
Ic Max. (A) 1.0
@Ic (test) (A) 10m
Mat. Silicon Logic
Polarity NPN
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 8 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 5000
SKU 80982
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