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2SC2322
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2SC2322

SKU: 2SC2322
2SC2322 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Fujitsu
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 120
Max. hFE 200
Min hFE 50
Ic Max. (A) 12
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
R(sat) (Û) 400m
Derate Above 25°C 960m
Trans. Freq (Hz) Min. 60M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 120 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 12 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 300 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 540351
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