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2SC2360
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2SC2360

SKU: 2SC2360
2SC2360 Transistor Silicon NPN CASE: TO218 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Matsushita Electronics
Vbr CBO 30
Vbr CEO 30
Max. PD (W) 200m
C(ob) (F) .95p
hfe 20
Ic Max. (A) 20m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 1.1G
@VCE (test) (V) 10i
Oper. Temp (°C) Max. 135
@Ic (A) 3m
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.02 A
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 0.9 pF
Transition Frequency (ft): 550 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 765749
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