2SC2382

SKU: 2SC2382

2SC2382 Transistor Silicon NPN CASE: MD34 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	MD34
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	18
Max. PD (W)	100
Min hFE	10
Ic Max. (A)	12
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
Derate Above 25°C	670m
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	4-28
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	12 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	120 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	765743

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