Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO98 |
Vbr CBO |
160 |
Vbr CEO |
160 |
Max. PD (W) |
900m |
C(ob) (F) |
35p |
hfe |
320= |
Ic Max. (A) |
1.0 |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
50M |
@VCE (test) (V) |
5.0 |
@Ic (A) |
200m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.9 W |
Maximum Collector-Base Voltage |Vcb| |
160 V |
Maximum Collector-Emitter Voltage |Vce| |
160 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
1 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
20 pF |
Transition Frequency (ft): |
20 MHz |
Forward Current Transfer Ratio (hFE), MIN |
160 |
SKU |
395137 |