| Weight |
0.01 kg
|
| Type |
Transistor |
| Case |
TO92S |
| Manufacturer |
Toshiba |
| Vbr CBO |
50 |
| Vbr CEO |
50 |
| Max. PD (W) |
200m |
| C(ob) (F) |
2.0p |
| Derate (Amb) (W/°C) |
2.0m |
| hfe |
70 |
| Ic Max. (A) |
150m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
80M |
| @VCE (test) (V) |
6.0 |
| Oper. Temp (°C) Max. |
125 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
50 V |
| Maximum Collector-Emitter Voltage |Vce| |
50 V |
| Maximum Emitter-Base Voltage |Veb| |
7 V |
| Maximum Collector Current |Ic max| |
0.15 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
3.4 pF |
| Transition Frequency (ft): |
80 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
70 |
| SKU |
16582 |