| Type | Transistor Silicon NPN | |
| Case | TO218 | |
| Manufacturer | Mitsubishi | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Base Voltage |Vcb| | 410 V | |
| Maximum Emitter-Base Voltage |Veb| | 8 V | |
| Maximum Collector Current |Ic max| | 10 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 765627 | |