The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2541
View detailed images (12)

2SC2541

SKU: 2SC2541
2SC2541 Transistor Silicon NPN CASE: TO218 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Mitsubishi
Vbr CBO 500
Vbr CEO 450
Max. PD (W) 100
Max. hFE 45
Min hFE 15
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 30u
Polarity NPN
Tr Max. (s) 1.0u
Derate Above 25°C 800m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 450 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 395161
Back