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2SC2563
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2SC2563

SKU: 2SC2563
2SC2563 Transistor Silicon NPN CASE: TO218 MAKE: Toshiba
Datasheet
2SC2563 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO218
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 80
Max. hFE 240
Min hFE 55
Ic Max. (A) 8.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 640m
Trans. Freq (Hz) Min. 90M
Oper. Temp (°C) Max. 150
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 90 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 366424
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