;
Case | MT200 | |
Type | Transistor Silicon NPN | |
Manufacturer | Toshiba | |
Vbr CBO | 160 | |
Vbr CEO | 160 | |
Max. PD (W) | 150 | |
Max. hFE | 240 | |
Min hFE | 55 | |
Ic Max. (A) | 15 | |
@Ic (test) (A) | 1.0 | |
Icbo Max. @Vcb Max. (A) | 50u | |
Polarity | NPN | |
Derate Above 25°C | 1.2 | |
Trans. Freq (Hz) Min. | 80M | |
Oper. Temp (°C) Max. | 140 | |
@VCE (V) | 5.0 | |
Pinout Equivalence Number | 3-15 | |
Surface Mounted Yes/No | NO | |
Maximum Collector Power Dissipation (Pc) | 150 W | |
Maximum Collector-Base Voltage |Vcb| | 160 V | |
Maximum Collector-Emitter Voltage |Vce| | 160 V | |
Maximum Emitter-Base Voltage |Veb| | 5 V | |
Maximum Collector Current |Ic max| | 15 A | |
Max. Operating Junction Temperature (Tj) | 150 °C | |
Collector Capacitance (Cc) | 200 pF | |
Transition Frequency (ft): | 30 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 55 | |
SKU | 81013 |