2SC2609

SKU: 2SC2609

2SC2609 Transistor - Case: SOT119 Make: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT119
Manufacturer	Mitsubishi
Vbr CBO	55
Vbr CEO	35
Max. PD (W)	170
Max. hFE	110
Min hFE	20
Ic Max. (A)	15
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	10m
Polarity	NPN
Derate Above 25°C	1.1
Oper. Temp (°C) Max.	175
@VCE (V)	25
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	170 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	220 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	552288

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