2SC2618

SKU: 2SC2618

2SC2618 Transistor Silicon NPN CASE: TO236 MAKE: Hitachi

Datasheet

2SC2618 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	Hitachi
Vbr CEO	35
Max. PD (W)	150m
hfe	60
Ic Max. (A)	500m
Polarity	NPN
@VCE (test) (V)	3.0
@Ic (A)	10m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	5 pF
Transition Frequency (ft):	25 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SMD Transistor Code	RB_RC_RD
SKU	343929

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