2SC2619B

SKU: 2SC2619B

2SC2619B Transistor Silicon NPN CASE: TO236 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Equivalent	2SC2619
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	Hitachi
Vbr CBO	30
Vbr CEO	30
Max. PD (W)	150m
C(ob) (F)	3.5p
Derate (Amb) (W/°C)	1.5m
hfe	120=
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	500n
Polarity	NPN
Trans. Freq (Hz) Min.	230M
@VCE (test) (V)	12
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	3.5 pF
Transition Frequency (ft):	115 MHz
Forward Current Transfer Ratio (hFE), MIN	55
SMD Transistor Code	FA_FB_FC
SKU	765573

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