2SC2633

SKU: 2SC2633

2SC2633 Transistor Silicon NPN CASE: TO220 MAKE: Matsushita Electronics

Datasheet

2SC2633 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Matsushita Electronics
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	1.5
Max. hFE	450
Min hFE	65
Ic Max. (A)	50m
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Derate Above 25°C	12m
Trans. Freq (Hz) Min.	160M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1.5 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	2 pF
Transition Frequency (ft):	80 MHz
Forward Current Transfer Ratio (hFE), MIN	65
SKU	765563

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