Weight |
0.01 kg
|
Case |
MT200 |
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Vbr CBO |
500 |
Vbr CEO |
400 |
Max. PD (W) |
100 |
t(f) Max. (S) |
1.0u |
Min hFE |
10 |
Ic Max. (A) |
10 |
@Ic (test) (A) |
5.0 |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
Tr Max. (s) |
1.0u |
Derate Above 25°C |
800m |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
100 W |
Maximum Collector-Base Voltage |Vcb| |
500 V |
Maximum Collector-Emitter Voltage |Vce| |
400 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
10 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Forward Current Transfer Ratio (hFE), MIN |
10 |
SKU |
395180 |