2SC2713

SKU: 2SC2713

2SC2713 Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba

Datasheet

2SC2713 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Toshiba
Vbr CBO	120
Vbr CEO	120
Max. PD (W)	150m
C(ob) (F)	4.0p
Derate (Amb) (W/°C)	1.5m
hfe	200
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	120 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	4 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SMD Transistor Code	DG_DL
SKU	343939

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