2SC2715R

SKU: 2SC2715R

2SC2715R Transistor Silicon NPN CASE: SOT23 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SC2715
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	30
Max. PD (W)	150m
Derate (Amb) (W/°C)	1.5m
hfe	40
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	12
Oper. Temp (°C) Max.	150
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	3.2 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SMD Transistor Code	RO_RR_RY
SKU	585966

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