The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2800
View detailed images (12)

2SC2800

SKU: 2SC2800
2SC2800 Transistor Silicon NPN CASE: SOT119 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case SOT119
Manufacturer Mitsubishi
Vbr CBO 45
Vbr CEO 35
Max. PD (W) 75
Max. hFE 180
Min hFE 10
Ic Max. (A) 6.0
@Ic (test) (A) .20
Icbo Max. @Vcb Max. (A) 2.0m
Polarity NPN
Derate Above 25°C 500m
Trans. Freq (Hz) Min. 1.0G
Oper. Temp (°C) Max. 175
@VCE (V) 25
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 770 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 552291
Back