2SC281H

SKU: 2SC281H

2SC281H Transistor Silicon NPN CASE: TO1 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO1
Manufacturer	Hitachi
Vbr CBO	30
Vbr CEO	20
Max. PD (W)	200m
C(ob) (F)	10p
Derate (Amb) (W/°C)	1.3m
hfe	170
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	200M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	175
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	10 pF
Transition Frequency (ft):	90 MHz
Forward Current Transfer Ratio (hFE), MIN	170
SKU	543005

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