2SC282H

2SC282H

SKU: 2SC282H
2SC282H Transistor Silicon NPN CASE: TO1 MAKE: Hitachi
Product specifications
Equivalent 2SC282
Type Transistor Silicon NPN
Case TO1
Manufacturer Hitachi
Vbr CBO 30
Vbr CEO 20
Max. PD (W) 350m
C(ob) (F) 10p
t(on) Delay (S) 500n
Derate (Amb) (W/°C) 2.3m
t(f) Max. (S) 1.4u+
hfe 5.0
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Tr Max. (s) 1.0u
t(stor) Max. (S) 600n
Trans. Freq (Hz) Min. 220M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 175
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 10 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 1280188
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