The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2876
View detailed images (13)

2SC2876

SKU: 2SC2876
2SC2876 Transistor Silicon NPN CASE: SOT103 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT103
Manufacturer Toshiba
Vbr CBO 15
Vbr CEO 7.5
Max. PD (W) 200m
C(ob) (F) .86p
Derate (Amb) (W/°C) 2.0m
hfe 30
Ic Max. (A) 80m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 7.0G
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 125
@Ic (A) 50m
Pinout Equivalence Number 4-34
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 7 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.08 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 1.6 pF
Transition Frequency (ft): 7000 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 395199
Back