Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
SOT121 |
Vbr CBO |
45 |
Vbr CEO |
18 |
Max. PD (W) |
250 |
Max. hFE |
150 |
Min hFE |
10 |
Ic Max. (A) |
25 |
@Ic (test) (A) |
10 |
Icbo Max. @Vcb Max. (A) |
12m |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
100M |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
4-28 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
250 W |
Maximum Collector-Base Voltage |Vcb| |
45 V |
Maximum Emitter-Base Voltage |Veb| |
4 V |
Maximum Collector Current |Ic max| |
25 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Transition Frequency (ft): |
120 MHz |
Forward Current Transfer Ratio (hFE), MIN |
50 |
SKU |
81059 |