The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2881O
View detailed images (12)

2SC2881O

SKU: 2SC2881O
2SC2881O Transistor Silicon NPN CASE: SOT89 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 500m
C(ob) (F) 30p
Derate (Amb) (W/°C) 4.0m
hfe 160=
Ic Max. (A) 800m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 120M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 100m
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 585986
Back