| 2SC2899 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO126 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 500 | |
| Vbr CEO | 400 | |
| Max. PD (W) | 750m | |
| hfe | 15 | |
| Ic Max. (A) | 0.5 | |
| Icbo Max. @Vcb Max. (A) | 20u | |
| Polarity | NPN | |
| @VCE (test) (V) | 5.0 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 250m | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 10 W | |
| Maximum Collector-Base Voltage |Vcb| | 400 V | |
| Maximum Collector Current |Ic max| | 0.5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 15 | |
| SKU | 81061 | |