Weight |
0.01 kg
|
Case |
SOT119 |
Type |
Transistor Silicon NPN |
Manufacturer |
Mitsubishi |
Vbr CBO |
50 |
Vbr CEO |
20 |
Max. PD (W) |
200 |
Max. hFE |
180 |
Min hFE |
10 |
Ic Max. (A) |
22 |
@Ic (test) (A) |
1.0 |
Icbo Max. @Vcb Max. (A) |
5.0m |
Polarity |
NPN |
Derate Above 25°C |
1.3 |
Oper. Temp (°C) Max. |
175 |
@VCE (V) |
10i |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
200 W |
Maximum Collector-Base Voltage |Vcb| |
50 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
22 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Transition Frequency (ft): |
15 MHz |
Forward Current Transfer Ratio (hFE), MIN |
45 |
SKU |
343975 |