| 2SC2925 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO92 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 60 | |
| Vbr CEO | 50 | |
| Max. PD (W) | 750m | |
| C(ob) (F) | 11p | |
| Derate (Amb) (W/°C) | 6.0m | |
| hfe | 1.0k= | |
| Ic Max. (A) | 700m | |
| Icbo Max. @Vcb Max. (A) | 1.0u | |
| Polarity | NPN | |
| @VCE (test) (V) | 10 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 150m | |
| Pinout Equivalence Number | 3-10 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.75 W | |
| Maximum Collector-Base Voltage |Vcb| | 60 V | |
| Maximum Collector Current |Ic max| | 0.7 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Transition Frequency (ft): | 125 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 1000 | |
| SKU | 343979 | |