The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC2980
View detailed images (13)

2SC2980

SKU: 2SC2980
2SC2980 Transistor Silicon NPN CASE: MT200 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case MT200
Manufacturer Hitachi
Vbr CBO 900
Vbr CEO 800
Max. PD (W) 80
t(f) Max. (S) 1u
Min hFE 15
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 1u
Derate Above 25°C 640m
Oper. Temp (°C) Max. 140
@VCE (V) 5
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 900 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 395215
Back