2SC2981

SKU: 2SC2981

2SC2981 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CBO	900
Vbr CEO	800
Max. PD (W)	100
t(f) Max. (S)	1u
Min hFE	15
Ic Max. (A)	8.0
@Ic (test) (A)	800m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	1u
Derate Above 25°C	800m
Oper. Temp (°C) Max.	140
@VCE (V)	5
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	900 V
Maximum Collector-Emitter Voltage \|Vce\|	800 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	8 A
Max. Operating Junction Temperature (Tj)	135 °C
Forward Current Transfer Ratio (hFE), MIN	20
SKU	395216

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