2SC2982C

2SC2982C

SKU: 2SC2982C
2SC2982C Transistor Silicon NPN CASE: SOT89 MAKE: Toshiba
Product specifications
Equivalent 2SC2982
Type Transistor Silicon NPN
Case SOT89
Manufacturer Toshiba
Vbr CBO 30
Vbr CEO 10
Max. PD (W) 500m
C(ob) (F) 27p
Derate (Amb) (W/°C) 4.0m
hfe 450=
Ic Max. (A) 2.0
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) .50
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 27 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SKU 585996
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