2SC2996

SKU: 2SC2996

2SC2996 Transistor Silicon NPN CASE: SP0 MAKE: Toshiba

Datasheet

2SC2996 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SP0
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	30
Max. PD (W)	150m
Derate (Amb) (W/°C)	1.5m
hfe	40
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	350M
@VCE (test) (V)	6.0
Oper. Temp (°C) Max.	125
@Ic (A)	1.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	1.3 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	115276

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