2SC3011

SKU: 2SC3011

2SC3011 Transistor Silicon NPN CASE: SC59 MAKE: Toshiba

Datasheet

2SC3011 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SC59
Manufacturer	Toshiba
Vbr CBO	20
@Ic (A)	5.0m
Mat.	Silicon Logic
Noise Fig.	2.3
Oper. Gain Typ (S21)	12
f(osc) Max. (Hz)	6.5G
Polarity	NPN
PD Max. (W)	150m
Coll. (or drain) Current Max.	30m
@Freq. (test)	1.0G
@VCE (test)	5.0
Oper. Temp (°C) Max.	125
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	7 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.03 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	0.9 pF
Transition Frequency (ft):	6500 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SMD Transistor Code	MA
SKU	115277

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